Infineon Technologies IPB80N06S4L05ATMA2

MOSFET_)40V,60V)

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPB80N06S4L05ATMA2
Package: Bulk
Datasheet: PDF
Stock: 1
SKU: IPB80N06S4L05ATMA2
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Details

Parameters
Mfr	Infineon Technologies
Series	Automotive, AEC-Q101, OptiMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	2.2V @ 60µA
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	8180 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	107W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Moisture Sensitivity Level (MSL)	Vendor Undefined
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	0000.00.0000
Other Names	2156-IPB80N06S4L05ATMA2-448
Standard Package	323

N-Channel 60 V 80A (Tc) 107W (Tc) Surface Mount PG-TO263-3-2