Infineon Technologies IPB80P03P4L04ATMA1

MOSFET_(20V,40V)

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPB80P03P4L04ATMA1
Package: Bulk
Datasheet: PDF
Stock: 5961
SKU: IPB80P03P4L04ATMA1
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Details

Parameters
Mfr	Infineon Technologies
Series	OptiMOS™
Package	Bulk
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	2V @ 253µA
Gate Charge (Qg) (Max) @ Vgs	160 nC @ 10 V
Vgs (Max)	+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds	11300 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	137W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Moisture Sensitivity Level (MSL)	Vendor Undefined
REACH Status	REACH Unaffected
Other Names	2156-IPB80P03P4L04ATMA1-448
Standard Package	1

P-Channel 30 V 80A (Tc) 137W (Tc) Surface Mount PG-TO263-3-2