Infineon Technologies IPD052N10NF2SATMA1

MOSFET

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPD052N10NF2SATMA1
Package: Tube
Datasheet: PDF
Stock: 1989
SKU: IPD052N10NF2SATMA1
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Details

Parameters
Mfr	Infineon Technologies
Series	StrongIRFET™ 2
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	17A (Ta), 118A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	5.2mOhm @ 70A, 10V
Vgs(th) (Max) @ Id	3.8V @ 84µA
Gate Charge (Qg) (Max) @ Vgs	76 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3600 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,000

N-Channel 100 V 17A (Ta), 118A (Tc) 3W (Ta), 150W (Tc) Surface Mount PG-TO252-3