Infineon Technologies IPD060N03LG

OPTLMOS N-CHANNEL POWER MOSFET

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPD060N03LG
Package: Bulk
Datasheet: PDF
Stock: 3600
SKU: IPD060N03LG
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Details

Parameters
Mfr	Infineon Technologies
Series	OptiMOS™3
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2300 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	56W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-11
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
HTSUS	0000.00.0000
Standard Package	1

N-Channel 30 V 50A (Tc) 56W (Tc) Surface Mount PG-TO252-3-11