Infineon Technologies IPD079N06L3GATMA1

MOSFET N-CH 60V 50A TO252-3

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPD079N06L3GATMA1
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 3
SKU: IPD079N06L3GATMA1
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Unit Price: $1.1000

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Details

Parameters
Mfr	Infineon Technologies
Series	OptiMOS™
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.2V @ 34µA
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4900 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	79W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-311
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	IPD079N
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,500

N-Channel 60 V 50A (Tc) 79W (Tc) Surface Mount PG-TO252-3-311