Infineon Technologies IPD18DP10LMATMA1

TRENCH >=100V PG-TO252-3

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPD18DP10LMATMA1
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 2
SKU: IPD18DP10LMATMA1
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Unit Price: $1.5500

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Details

Parameters
Mfr	Infineon Technologies
Series	OptiMOS™
Package	Tape & Reel (TR)
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta), 13.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	178mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	2V @ 1.04mA
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2100 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 83W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	IPD18D
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,500

P-Channel 100 V 2.5A (Ta), 13.9A (Tc) 3W (Ta), 83W (Tc) Surface Mount PG-TO252-3