Infineon Technologies IPD25N06S4L-30ATMA2

IPD25N06 - 55V-60V N-CHANNEL AUT

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPD25N06S4L-30ATMA2
Package: Bulk
Datasheet: PDF
Stock: 3200
SKU: IPD25N06S4L-30ATMA2
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Details

Parameters
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	30mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2.2V @ 8µA
Gate Charge (Qg) (Max) @ Vgs	16.3 nC @ 10 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	1220 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	29W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-11
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1
Mfr	Infineon Technologies
Series	OptiMOS®
Package	Bulk
Product Status	Active
FET Type	N-Channel

N-Channel 60 V 25A (Tc) 29W (Tc) Surface Mount PG-TO252-3-11