Parameters |
Mfr |
Infineon Technologies |
Series |
OptiMOS®-P2 |
Package |
Bulk |
Product Status |
Obsolete |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
40 V |
Current - Continuous Drain (Id) @ 25°C |
50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
10.6mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id |
2.2V @ 85µA |
Gate Charge (Qg) (Max) @ Vgs |
59 nC @ 10 V |
Vgs (Max) |
+5V, -16V |
Input Capacitance (Ciss) (Max) @ Vds |
3900 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
58W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
PG-TO252-3-313 |
Package / Case |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
Base Product Number |
IPD50 |
ECCN |
OBSOLETE |
Standard Package |
1 |
P-Channel 40 V 50A (Tc) 58W (Tc) Surface Mount PG-TO252-3-313