Infineon Technologies IPD78CN10NG

POWER FIELD-EFFECT TRANSISTOR, 1

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPD78CN10NG
Package: Bulk
Datasheet: PDF
Stock: 3287
SKU: IPD78CN10NG
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Details

Parameters
Mfr	Infineon Technologies
Series	OptiMOS™ 2
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	78mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	716 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	31W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-313
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN	EAR99
HTSUS	8542.39.0001
Standard Package	1

N-Channel 100 V 13A (Tc) 31W (Tc) Surface Mount PG-TO252-3-313