Infineon Technologies IPD80P03P4L07ATMA2

MOSFET P-CH 30V 80A TO252-31

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPD80P03P4L07ATMA2
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 29
SKU: IPD80P03P4L07ATMA2
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Unit Price: $1.9100

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Details

Parameters
Mfr	Infineon Technologies
Series	Automotive, AEC-Q101, OptiMOS®-P2
Package	Tape & Reel (TR)
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Rds On (Max) @ Id, Vgs	6.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Vgs (Max)	+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds	5700 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	88W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-11
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	IPD80P03
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,500

P-Channel 30 V 80A (Tc) 88W (Tc) Surface Mount PG-TO252-3-11