Infineon Technologies IPD95R450PFD7ATMA1

MOSFET N-CH 950V 13.3A TO252-3

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPD95R450PFD7ATMA1
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 6173
SKU: IPD95R450PFD7ATMA1
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Details

Parameters
Mfr	Infineon Technologies
Series	CoolMOS™
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	950 V
Current - Continuous Drain (Id) @ 25°C	13.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	450mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id	3.5V @ 360µA
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1230 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,500

N-Channel 950 V 13.3A (Tc) 104W (Tc) Surface Mount PG-TO252-3