Infineon Technologies IPDD60R102G7XTMA1

IPDD60R102 - HIGH POWER_NEW

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPDD60R102G7XTMA1
Package: Bulk
Datasheet: PDF
Stock: 7490
SKU: IPDD60R102G7XTMA1
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Details

Parameters
Mfr	Infineon Technologies
Series	CoolMOS™ G7
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	102mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id	4V @ 390µA
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1320 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	139W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HDSOP-10-1
Package / Case	10-PowerSOP Module
Moisture Sensitivity Level (MSL)	Vendor Undefined
REACH Status	REACH Unaffected
Other Names	2156-IPDD60R102G7XTMA1-448
Standard Package	1

N-Channel 600 V 23A (Tc) 139W (Tc) Surface Mount PG-HDSOP-10-1