Infineon Technologies IPI120N10S403AKSA1

IPI120N10S4-03 - 75V-100V N-CHAN

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPI120N10S403AKSA1
Package: Bulk
Datasheet: PDF
Stock: 4292
SKU: IPI120N10S403AKSA1
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Details

Parameters
Mfr	Infineon Technologies
Series	Automotive, AEC-Q101, OptiMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs	140 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10120 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3-1
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Moisture Sensitivity Level (MSL)	Vendor Undefined
REACH Status	REACH Unaffected
Other Names	2156-IPI120N10S403AKSA1-448
Standard Package	1

N-Channel 100 V 120A (Tc) 250W (Tc) Through Hole PG-TO262-3-1