Infineon Technologies IPI70R950CE

POWER FIELD-EFFECT TRANSISTOR

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPI70R950CE
Package: Bulk
Datasheet: PDF
Stock: 7696
SKU: IPI70R950CE
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Details

Parameters
Mfr	Infineon Technologies
Series	CoolMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	700 V
Current - Continuous Drain (Id) @ 25°C	7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 150mA
Gate Charge (Qg) (Max) @ Vgs	15.3 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	328 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	68W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3-1
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
HTSUS	0000.00.0000
Standard Package	1

N-Channel 700 V 7.4A (Tc) 68W (Tc) Through Hole PG-TO262-3-1