| Parameters |
| Mfr |
Infineon Technologies |
| Series |
OptiMOS™ |
| Package |
Tube |
| Product Status |
Obsolete |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
60 V |
| Current - Continuous Drain (Id) @ 25°C |
80A (Tc) |
| Rds On (Max) @ Id, Vgs |
8.5mOhm @ 80A. 10V |
| Vgs(th) (Max) @ Id |
2V @ 125µA |
| Gate Charge (Qg) (Max) @ Vgs |
104 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds |
3500 pF @ 30 V |
| FET Feature |
- |
| Mounting Type |
Through Hole |
| Supplier Device Package |
PG-TO220-3-1 |
| Package / Case |
TO-220-3 |
| Base Product Number |
IPP085N |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
50 |
N-Channel 60 V 80A (Tc) Through Hole PG-TO220-3-1