Infineon Technologies IPP086N10N3G

POWER FIELD-EFFECT TRANSISTOR, 8

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPP086N10N3G
Package: Bulk
Datasheet: PDF
Stock: 5401
SKU: IPP086N10N3G
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Details

Parameters
Mfr	Infineon Technologies
Series	OptiMOS™ 3
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	8.6mOhm @ 73A, 10V
Vgs(th) (Max) @ Id	3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3980 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-1
Package / Case	TO-220-3
ECCN	EAR99
HTSUS	8542.39.0001
Standard Package	150

N-Channel 100 V 80A (Tc) 125W (Tc) Through Hole PG-TO220-3-1