Infineon Technologies IPP80R1K4P7

IPP80R1K4 - 800V COOLMOS N-CHANN

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPP80R1K4P7
Package: Bulk
Datasheet: PDF
Stock: 8148
SKU: IPP80R1K4P7
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Details

Parameters
Mfr	Infineon Technologies
Series	CoolMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id	3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	250 pF @ 500 V
FET Feature	-
Power Dissipation (Max)	32W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-1
Package / Case	TO-220-3
ECCN	EAR99
HTSUS	8542.39.0001
Standard Package	1

N-Channel 800 V 4A (Tc) 32W (Tc) Through Hole PG-TO220-3-1