Infineon Technologies IPS12CN10LG

N-CHANNEL POWER MOSFET

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPS12CN10LG
Package: Bulk
Datasheet: PDF
Stock: 1738
SKU: IPS12CN10LG
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Details

Parameters
Mfr	Infineon Technologies
Series	OptiMOS™2
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	69A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	12mOhm @ 69A, 10V
Vgs(th) (Max) @ Id	2.4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5600 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO251-3-11
Package / Case	TO-251-3 Stub Leads, IPak
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	43

N-Channel 100 V 69A (Tc) 125W (Tc) Through Hole PG-TO251-3-11