Infineon Technologies IPTG011N08NM5ATMA1

MOSFET N-CH 80V 42A/408A HSOG-8

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPTG011N08NM5ATMA1
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 3
SKU: IPTG011N08NM5ATMA1
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Unit Price: $8.1100

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Details

Parameters
Mfr	Infineon Technologies
Series	OptiMOS™ 5
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	42A (Ta), 408A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.1mOhm @ 150A, 10V
Vgs(th) (Max) @ Id	3.8V @ 280µA
Gate Charge (Qg) (Max) @ Vgs	223 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	17000 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOG-8-1
Package / Case	8-PowerSMD, Gull Wing
Base Product Number	IPTG011N
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1,800

N-Channel 80 V 42A (Ta), 408A (Tc) 3.8W (Ta), 375W (Tc) Surface Mount PG-HSOG-8-1