Infineon Technologies IPTG111N20NM3FDATMA1 - Infineon Technologies FETs, MOSFETs - BOM, Chip Distributor, Quick Quotation 365day Warranty
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Infineon Technologies IPTG111N20NM3FDATMA1

TRENCH >=100V PG-HSOG-8

  • Manufacturer: Infineon Technologies
  • Manufacturer's number: Infineon Technologies IPTG111N20NM3FDATMA1
  • Package: Tape & Reel (TR)
  • Datasheet: PDF
  • Stock: 59
  • SKU: IPTG111N20NM3FDATMA1
  • Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Unit Price: $8.3200

Ext Price: $8.3200

Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,800
Mfr Infineon Technologies
Series OptiMOS™ 3
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 10.8A (Ta), 108A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11.1mOhm @ 96A, 10V
Vgs(th) (Max) @ Id 4V @ 267µA
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7000 pF @ 100 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOG-8-1
Package / Case 8-PowerSMD, Gull Wing
Base Product Number IPTG111N
RoHS Status ROHS3 Compliant
N-Channel 200 V 10.8A (Ta), 108A (Tc) 3.8W (Ta), 375W (Tc) Surface Mount PG-HSOG-8-1