Infineon Technologies IPW65R019C7

75A, 650V, 0.019OHM, N-CHANNEL M

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPW65R019C7
Package: Bulk
Datasheet: PDF
Stock: 3178
SKU: IPW65R019C7
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Details

Parameters
Mfr	Infineon Technologies
Series	CoolMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	19mOhm @ 58.3A, 10V
Vgs(th) (Max) @ Id	4V @ 2.92mA
Gate Charge (Qg) (Max) @ Vgs	215 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9900 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	446W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3
Package / Case	TO-247-3
HTSUS	0000.00.0000
Standard Package	1

N-Channel 650 V 75A (Tc) 446W (Tc) Through Hole PG-TO247-3