Infineon Technologies IPW90R120C3FKSA1

MOSFET N-CH 900V 36A TO247-3 COO

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPW90R120C3FKSA1
Package: Bulk
Datasheet: PDF
Stock: 4803
SKU: IPW90R120C3FKSA1
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Details

Parameters
Mfr	Infineon Technologies
Series	CoolMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id	3.5V @ 2.9mA
Gate Charge (Qg) (Max) @ Vgs	270 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6800 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	417W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-1
Package / Case	TO-247-3
Moisture Sensitivity Level (MSL)	Vendor Undefined
REACH Status	REACH Unaffected
Other Names	2156-IPW90R120C3FKSA1-448
Standard Package	1

N-Channel 900 V 36A (Tc) 417W (Tc) Through Hole PG-TO247-3-1