Infineon Technologies IQDH29NE2LM5CGATMA1

OPTIMOS 6 POWER-TRANSISTOR

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IQDH29NE2LM5CGATMA1
Package: Tape & Reel (TR)
Datasheet: -
Stock: 3710
SKU: IQDH29NE2LM5CGATMA1
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Unit Price: $3.8200

Ext Price: $3.8200

Details

Parameters
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	0.29mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2V @ 1.448mA
Gate Charge (Qg) (Max) @ Vgs	254 nC @ 10 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	17000 pF @ 12 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 278W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TTFN-9-U02
Package / Case	9-PowerTDFN
Base Product Number	IQDH29
RoHS Status	ROHS3 Compliant
ECCN	EAR99
HTSUS	8542.39.0001
Standard Package	5,000
Mfr	Infineon Technologies
Series	OptiMOS™ 5
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	75A (Ta), 789A (Tc)

N-Channel 25 V 75A (Ta), 789A (Tc) 2.5W (Ta), 278W (Tc) Surface Mount PG-TTFN-9-U02