Infineon Technologies IQE006NE2LM5CGATMA1

MOSFET N-CH 25V 41A/298A IPAK

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IQE006NE2LM5CGATMA1
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 8701
SKU: IQE006NE2LM5CGATMA1
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Details

Parameters
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	5,000
Mfr	Infineon Technologies
Series	OptiMOS™ 5
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs	650mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	82.1 nC @ 10 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	5453 pF @ 12 V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 89W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	IPAK (TO-251AA)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number	IQE006
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected

N-Channel 25 V 41A (Ta), 298A (Tc) 2.1W (Ta), 89W (Tc) Through Hole IPAK (TO-251AA)