Infineon Technologies IQE006NE2LM5CGSCATMA1

OPTIMOS LOWVOLTAGE POWER MOSFET

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IQE006NE2LM5CGSCATMA1
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 2219
SKU: IQE006NE2LM5CGSCATMA1
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Unit Price: $2.8100

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Details

Parameters
Mfr	Infineon Technologies
Series	OptiMOS™ 5
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	47A (Ta), 310A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	0.58mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	82 nC @ 10 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	5453 pF @ 12 V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 89W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-WHTFN-9-1
Package / Case	9-PowerWDFN
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	6,000

N-Channel 25 V 47A (Ta), 310A (Tc) 2.1W (Ta), 89W (Tc) Surface Mount PG-WHTFN-9-1