Infineon Technologies IQE013N04LM6SCATMA1

OPTIMOS LOWVOLTAGE POWER MOSFET

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IQE013N04LM6SCATMA1
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 4152
SKU: IQE013N04LM6SCATMA1
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Unit Price: $3.1000

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Details

Parameters
Mfr	Infineon Technologies
Series	OptiMOS™ 6
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	31A (Ta), 205A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 51µA
Gate Charge (Qg) (Max) @ Vgs	41 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3800 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 107W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-WHSON-8-1
Package / Case	8-PowerWDFN
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	6,000

N-Channel 40 V 31A (Ta), 205A (Tc) 2.5W (Ta), 107W (Tc) Surface Mount PG-WHSON-8-1