Infineon Technologies IRF3708PBF

IRF3708 - 12V-300V N-CHANNEL POW

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IRF3708PBF
Package: Bulk
Datasheet: PDF
Stock: 9328
SKU: IRF3708PBF
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Details

Parameters
Mfr	Infineon Technologies
Series	HEXFET®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.8V, 10V
Rds On (Max) @ Id, Vgs	12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	2417 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	87W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Moisture Sensitivity Level (MSL)	Vendor Undefined
REACH Status	REACH Unaffected
Other Names	2156-IRF3708PBF-448
Standard Package	1

N-Channel 30 V 62A (Tc) 87W (Tc) Through Hole TO-220AB