Parameters |
Other Names |
2156-IRF7580MTRPBF-448 |
Standard Package |
1 |
Mfr |
Infineon Technologies |
Series |
StrongIRFET™ |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
60 V |
Current - Continuous Drain (Id) @ 25°C |
114A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
6V, 10V |
Rds On (Max) @ Id, Vgs |
3.6mOhm @ 70A, 10V |
Vgs(th) (Max) @ Id |
3.7V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs |
180 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
6510 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
115W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
DirectFET™ Isometric ME |
Package / Case |
DirectFET™ Isometric ME |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
N-Channel 60 V 114A (Tc) 115W (Tc) Surface Mount DirectFET™ Isometric ME