Infineon Technologies IRF9Z34NLPBF

PLANAR 40<-<100V

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IRF9Z34NLPBF
Package: Bulk
Datasheet: -
Stock: 335
SKU: IRF9Z34NLPBF
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Details

Parameters
Mfr	Infineon Technologies
Series	HEXFET®
Package	Bulk
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	100mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	620 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 68W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Moisture Sensitivity Level (MSL)	Vendor Undefined
REACH Status	REACH Unaffected
Other Names	2156-IRF9Z34NLPBF-448
Standard Package	335

P-Channel 55 V 19A (Tc) 3.8W (Ta), 68W (Tc) Through Hole TO-262