Infineon Technologies IRFB5615PBFXKMA1

MOSFET N-CH

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IRFB5615PBFXKMA1
Package: Tube
Datasheet: -
Stock: 7829
SKU: IRFB5615PBFXKMA1
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Details

Parameters
Mfr	Infineon Technologies
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	39mOhm @ 21A, 10V
Vgs(th) (Max) @ Id	5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1750 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	144W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	448-IRFB5615PBFXKMA1
Standard Package	1

N-Channel 150 V 35A (Tc) 144W (Tc) Through Hole TO-220AB