Infineon Technologies IRFP4668PBFXKMA1 - Infineon Technologies FETs, MOSFETs - BOM, Chip Distributor, Quick Quotation 365day Warranty
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Infineon Technologies IRFP4668PBFXKMA1

TRENCH >=100V PG-TO247-3

  • Manufacturer: Infineon Technologies
  • Manufacturer's number: Infineon Technologies IRFP4668PBFXKMA1
  • Package: Tube
  • Datasheet: PDF
  • Stock: 9781
  • SKU: IRFP4668PBFXKMA1
  • Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Unit Price: $9.1000

Ext Price: $9.1000

Details

Tags

Parameters
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 25
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9.7mOhm @ 81A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 241 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 10720 pF @ 50 V
FET Feature -
Power Dissipation (Max) 520W
N-Channel 200 V 130A (Tc) 520W Through Hole TO-247AC