Infineon Technologies IRFU024NPBFAKLA1

MOSFET N-CH

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IRFU024NPBFAKLA1
Package: Tube
Datasheet: -
Stock: 9762
SKU: IRFU024NPBFAKLA1
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Details

Parameters
Mfr	Infineon Technologies
Series	HEXFET®
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	75mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	370 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	45W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	IPAK (TO-251AA)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	448-IRFU024NPBFAKLA1
Standard Package	1

N-Channel 55 V 17A (Tc) 45W (Tc) Through Hole IPAK (TO-251AA)