Infineon Technologies IRLR3717TRRPBF

TRENCH <= 40V

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IRLR3717TRRPBF
Package: Bulk
Datasheet: PDF
Stock: 5462
SKU: IRLR3717TRRPBF
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Details

Parameters
Mfr	Infineon Technologies
Series	HEXFET®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2830 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	89W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-Pak
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Moisture Sensitivity Level (MSL)	Vendor Undefined
REACH Status	REACH Unaffected
Other Names	2156-IRLR3717TRRPBF-448
Standard Package	1

N-Channel 20 V 120A (Tc) 89W (Tc) Surface Mount D-Pak