Infineon Technologies ISC037N12NM6ATMA1

OPTIMOS 6 POWER-TRANSISTOR,120V

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies ISC037N12NM6ATMA1
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 8151
SKU: ISC037N12NM6ATMA1
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Details

Parameters
Mfr	Infineon Technologies
Series	OptiMOS™ 6
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120 V
Current - Continuous Drain (Id) @ 25°C	19.2A (Ta), 163A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Rds On (Max) @ Id, Vgs	3.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	3.6V @ 111µA
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4300 pF @ 60 V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 214W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8 FL
Package / Case	8-PowerTDFN
Base Product Number	ISC037
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	5,000

N-Channel 120 V 19.2A (Ta), 163A (Tc) 3W (Ta), 214W (Tc) Surface Mount PG-TDSON-8 FL