Infineon Technologies ISZ019N03L5SATMA1

TRENCH <= 40V

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies ISZ019N03L5SATMA1
Package: Bulk
Datasheet: PDF
Stock: 1328
SKU: ISZ019N03L5SATMA1
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Details

Parameters
Mfr	Infineon Technologies
Series	OptiMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	22A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2800 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-8-FL
Package / Case	8-PowerTDFN
Moisture Sensitivity Level (MSL)	Vendor Undefined
REACH Status	REACH Unaffected
Other Names	2156-ISZ019N03L5SATMA1-448
Standard Package	1

N-Channel 30 V 22A (Ta), 40A (Tc) Surface Mount PG-TSDSON-8-FL