Parameters |
Mfr |
Infineon Technologies |
Series |
CoolMOS™ |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
560 V |
Current - Continuous Drain (Id) @ 25°C |
7.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
600mOhm @ 4.6A, 10V |
Vgs(th) (Max) @ Id |
3.9V @ 350µA |
Gate Charge (Qg) (Max) @ Vgs |
32 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
750 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
83W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
PG-TO220-3-1 |
Package / Case |
TO-220-3 |
Moisture Sensitivity Level (MSL) |
Vendor Undefined |
REACH Status |
REACH Unaffected |
Other Names |
2156-SPP08N50C3XKSA1-448 |
Standard Package |
1 |
N-Channel 560 V 7.6A (Tc) 83W (Tc) Through Hole PG-TO220-3-1