International Rectifier 2N6763

POWER FIELD-EFFECT TRANSISTOR, N

Manufacturer: International Rectifier
Manufacturer's number: International Rectifier 2N6763
Package: Bulk
Datasheet: PDF
Stock: 7317
SKU: 2N6763
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Details

Parameters
Mfr	International Rectifier
Series	HEXFET®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	80mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	150W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3
Package / Case	TO-204AA, TO-3
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	24

N-Channel 60 V 31A (Tc) 150W Through Hole TO-3