International Rectifier 2N6847

POWER FIELD-EFFECT TRANSISTOR, P

Manufacturer: International Rectifier
Manufacturer's number: International Rectifier 2N6847
Package: Bulk
Datasheet: PDF
Stock: 127
SKU: 2N6847
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Details

Parameters
Mfr	International Rectifier
Series	HEXFET®
Package	Bulk
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.725Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.4 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	330 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	20W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-205AF (TO-39)
Package / Case	TO-205AF Metal Can
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

P-Channel 200 V 2.5A (Tc) 20W (Tc) Through Hole TO-205AF (TO-39)