Parameters |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
3mOhm @ 65A, 10V |
Vgs(th) (Max) @ Id |
4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs |
108 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
4267 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
2.5W (Ta), 63W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
DirectFET™ Isometric M4 |
Package / Case |
DirectFET™ Isometric M4 |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
1 |
Mfr |
International Rectifier |
Series |
HEXFET® |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
40 V |
Current - Continuous Drain (Id) @ 25°C |
22A (Ta), 108A (Tc) |
N-Channel 40 V 22A (Ta), 108A (Tc) 2.5W (Ta), 63W (Tc) Surface Mount DirectFET™ Isometric M4