Parameters |
Mfr |
International Rectifier |
Series |
HEXFET® |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
40 V |
Current - Continuous Drain (Id) @ 25°C |
100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
3.1mOhm @ 76A, 10V |
Vgs(th) (Max) @ Id |
3.9V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs |
99 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
3171 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
99W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
I-PAK |
Package / Case |
TO-251-3 Short Leads, IPak, TO-251AA |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
1 |
N-Channel 40 V 100A (Tc) 99W (Tc) Through Hole I-PAK