Parameters |
Mfr |
International Rectifier |
Series |
HEXFET® |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
60 V |
Current - Continuous Drain (Id) @ 25°C |
195A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
2.4mOhm @ 165A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
140 nC @ 4.5 V |
Vgs (Max) |
±16V |
Input Capacitance (Ciss) (Max) @ Vds |
11210 pF @ 50 V |
FET Feature |
- |
Power Dissipation (Max) |
380W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
PG-TO263-3 |
Package / Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
1 |
N-Channel 60 V 195A (Tc) 380W (Tc) Surface Mount PG-TO263-3