Parameters |
Series |
DirectFET™ |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
25 V |
Current - Continuous Drain (Id) @ 25°C |
19A (Ta), 84A (Tc) |
Rds On (Max) @ Id, Vgs |
3.8mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id |
2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs |
20 nC @ 4.5 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
1810 pF @ 13 V |
FET Feature |
- |
Power Dissipation (Max) |
2.2W (Ta), 42W (Tc) |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
DirectFET™ Isometric SQ |
Package / Case |
DirectFET™ Isometric SQ |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
0000.00.0000 |
Standard Package |
1 |
Mfr |
International Rectifier |
N-Channel 25 V 19A (Ta), 84A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DirectFET™ Isometric SQ