Parameters |
Mfr |
International Rectifier |
Series |
HEXFET® |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
25 V |
Current - Continuous Drain (Id) @ 25°C |
40A (Ta), 214A (Tc) |
Rds On (Max) @ Id, Vgs |
1.1mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id |
2.1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs |
68 nC @ 4.5 V |
Vgs (Max) |
±16V |
Input Capacitance (Ciss) (Max) @ Vds |
5630 pF @ 13 V |
FET Feature |
Schottky Diode (Body) |
Power Dissipation (Max) |
2.8W (Ta), 78W (Tc) |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
DirectFET™ Isometric MX |
Package / Case |
DirectFET™ Isometric MX |
RoHS Status |
Not applicable |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
0000.00.0000 |
Standard Package |
1,009 |
N-Channel 25 V 40A (Ta), 214A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount DirectFET™ Isometric MX