Parameters |
Mfr |
International Rectifier |
Series |
HEXFET® |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20 V |
Current - Continuous Drain (Id) @ 25°C |
5.7A (Ta) |
Rds On (Max) @ Id, Vgs |
35mOhm @ 3.8A, 4.5V |
Vgs(th) (Max) @ Id |
700mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs |
22 nC @ 4.5 V |
Vgs (Max) |
±12V |
Input Capacitance (Ciss) (Max) @ Vds |
650 pF @ 15 V |
FET Feature |
- |
Power Dissipation (Max) |
1.8W (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
Micro8™ |
Package / Case |
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
0000.00.0000 |
Standard Package |
870 |
N-Channel 20 V 5.7A (Ta) 1.8W (Ta) Surface Mount Micro8™