Parameters |
Mfr |
International Rectifier |
Series |
HEXFET® |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
75 V |
Current - Continuous Drain (Id) @ 25°C |
17A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
5.9mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id |
4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs |
98 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
4290 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
3.6W (Ta), 156W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
8-PQFN (5x6) |
Package / Case |
8-PowerTDFN |
ECCN |
EAR99 |
HTSUS |
8542.39.0001 |
Standard Package |
1 |
N-Channel 75 V 17A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)