Parameters |
Mfr |
International Rectifier |
Series |
HEXFET® |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100 V |
Current - Continuous Drain (Id) @ 25°C |
9.3A (Ta), 46A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
18mOhm @ 9.3A, 10V |
Vgs(th) (Max) @ Id |
4.9V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs |
36 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
1510 pF @ 50 V |
FET Feature |
- |
Power Dissipation (Max) |
3.1W (Ta), 8.3W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
PQFN (5x6) Single Die |
Package / Case |
8-PowerVDFN |
HTSUS |
0000.00.0000 |
Standard Package |
1 |
N-Channel 100 V 9.3A (Ta), 46A (Tc) 3.1W (Ta), 8.3W (Tc) Surface Mount PQFN (5x6) Single Die