| Parameters |
| Mfr |
International Rectifier |
| Series |
HEXFET® |
| Package |
Bulk |
| Product Status |
Obsolete |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
30 V |
| Current - Continuous Drain (Id) @ 25°C |
12A (Ta), 35A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Rds On (Max) @ Id, Vgs |
12.8mOhm @ 16.2A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs |
10 nC @ 10 V |
| Vgs (Max) |
±20V |
| Input Capacitance (Ciss) (Max) @ Vds |
790 pF @ 10 V |
| FET Feature |
- |
| Power Dissipation (Max) |
3.2W (Ta), 27W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
PQFN (5x6) |
| Package / Case |
8-PowerTDFN |
| HTSUS |
0000.00.0000 |
| Standard Package |
1 |
N-Channel 30 V 12A (Ta), 35A (Tc) 3.2W (Ta), 27W (Tc) Surface Mount PQFN (5x6)