Parameters |
Mfr |
International Rectifier |
Series |
HEXFET® |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
30 V |
Current - Continuous Drain (Id) @ 25°C |
13A (Ta), 43A (Tc) |
Rds On (Max) @ Id, Vgs |
9mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id |
2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs |
15 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
1180 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
2.7W (Ta), 28W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
8-PQFN-Dual (3.3x3.3), Power33 |
Package / Case |
8-PowerVDFN |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
0000.00.0000 |
Standard Package |
1 |
N-Channel 30 V 13A (Ta), 43A (Tc) 2.7W (Ta), 28W (Tc) Surface Mount 8-PQFN-Dual (3.3x3.3), Power33