Parameters |
Current - Continuous Drain (Id) @ 25°C |
13A (Tc) |
Rds On (Max) @ Id, Vgs |
235mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id |
5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
38 nC @ 10 V |
Vgs (Max) |
±30V |
Input Capacitance (Ciss) (Max) @ Vds |
830 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
110W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
TO-252AA |
Package / Case |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Affected |
ECCN |
EAR99 |
HTSUS |
0000.00.0000 |
Standard Package |
1 |
Mfr |
International Rectifier |
Series |
HEXFET® |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
200 V |
N-Channel 200 V 13A (Tc) 110W (Tc) Surface Mount TO-252AA