International Rectifier IRFS31N20DTRLP

HEXFET N-CHANNEL POWER MOSFET

Manufacturer: International Rectifier
Manufacturer's number: International Rectifier IRFS31N20DTRLP
Package: Bulk
Datasheet: PDF
Stock: 4618
SKU: IRFS31N20DTRLP
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Details

Parameters
Mfr	International Rectifier
Series	HEXFET®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	82mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	107 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2370 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta), 200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Affected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

N-Channel 200 V 31A (Tc) 3.1W (Ta), 200W (Tc) Surface Mount D2PAK